absolute maximum ratings parameter units i d @ v gs = -10v, t c = 25c continuous drain current -11 i d @ v gs = -10v, t c = 100c continuous drain current -7.0 i dm pulsed drain current -44 p d @ t c = 25c max. power dissipation 125 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current -11 a e ar repetitive avalanche energy 12.5 mj dv/dt peak d iode recovery dv/dt -5.0 v/ns t j operating junction -55 to 150 t stg storage temperature range c lead temperature 300 (0.063 in.(1.6mm) from case for 10s) weight 9.3 (typical) g a www.irf.com 1 to-254aa product summary part number r ds(on) i d irfm9240 0.51 ? -11a for footnotes refer to the last page hexfet ? mosfet technology is the key to international rectifier?s advanced line of power mosfet transistors. the efficient geometry design achieves very low on-state resistance combined with hi gh transconduct ance. hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. they are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistor?s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. simple drive requirements ease of paralleling hermetically sealed electrically isolated dynamic dv/dt rating light-weight esd rating: class 2 per mil-std-750, method 1020 thru-hole (to-254aa) irfm9240 jantx2n7237 jantxv2n7237 jans2n7237 ref:mil-prf-19500/595 200v, p-channel hexfet ? mosfet technology power mosfet features: pd-90497g
irfm9240 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.0 r thcs case-to-sink ? 0.21 ? r thja junction-to-ambient ? ? 48 typical socket mount c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -11 i sm pulse source current (body diode) ? ? -44 v sd diode forward voltage ? ? -4.6 v t j = 25c, i s = -11a, v gs = 0v t rr reverse recovery time ? ? 440 ns t j = 25c, i f = -11a, di/dt -100a/ s q rr reverse recovery charge ? ? 7.2 c v dd -50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -200 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.2 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.51 v gs = -10v, i d = -7.0a resistance ? ? 0.52 v gs = -10v, i d = -11a v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -250a g fs forward transconductance 4.0 ? ? s v ds = -15v, i ds = -7.0a i dss zero gate voltage drain current ? ? -25 v ds = -160v, v gs = 0v ? ? -250 v ds = -160v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 60 v gs = -10v, i d = -11a q gs gate-to-source charge ? ? 15 nc v ds = -100v q gd gate-to-drain (?miller?) charge ? ? 38 t d (on) turn-on delay time ? ? 35 v dd = -100v, i d = -11a, t r rise time ? ? 85 r g = 9.1 ?, v gs = -10v t d (off) turn-off delay time ? ? 85 t f fall time ? ? 65 l s + l d total inductance ? 6.8 ? c iss input capacitance ? 1200 v gs = 0v, v ds = -25v c oss output capacitance ? 570 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 81 ? na nh ns a ? measured from drain lead (6mm/ 0.25 in. from package) to source lead (6mm/0.25in. from package) note: corresponding spice and saber models are available on international rectifier website.
www.irf.com 3 irfm9240 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics
irfm9240 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10ms 100 s dc operation in this area limited by r ds (on) 1ms
www.irf.com 5 irfm9240 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10b. switching time waveforms v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 %
+ - v gs fig 10a. switching time test circuit
irfm9240 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms t p v ( br ) dss i as fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v v gs
www.irf.com 7 irfm9240 footnotes: i sd -11a, di/dt ? 150a/ s, v dd -200v, t j 150c repetitive rating; pulse width limited by maximum junction temperature. v dd =-50v, starting t j = 25c, l = 8.3mh peak i l = -11a, v gs = -10v pulse width 300 s; duty cycle 2% case outline and dimensions ? to-254aa ir world headquarters: 101 n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2014 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max. b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. not es : pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
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